IPI80N06S2-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI80N06S2-07
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 250 W
Tensión drenaje-fuente (Vds): 55 V
Corriente continua de drenaje (Id): 80 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 110 nC
Resistencia drenaje-fuente RDS(on): 0.0066 Ohm
Empaquetado / Estuche: PGTO262
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IPI80N06S2-07 Datasheet (PDF)
1.1. ipi80n06s3-07.pdf 
Size:187K _infineon
IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 6.5 mΩ DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche
1.2. ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf Size:170K _infineon
IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking
1.3. ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf Size:170K _infineon
IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 6.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marki
1.4. ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05 green.pdf Size:158K _infineon
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% A
1.5. ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf Size:132K _infineon
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100%
1.6. ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08 green.pdf Size:158K _infineon
IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
1.7. ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07 green.pdf Size:158K _infineon
IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 6.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
Otros transistores... IPI80N04S2-04 , IPI80N04S2-H4 , IPI80N04S3-03 , IPI80N04S3-04 , IPI80N04S3-06 , IPI80N04S3-H4 , IPI80N04S4-04 , IPI80N04S4L-04 , IRFP4229 , IPI80N06S2-08 , IPI80N06S2L-05 , IPI80N06S2L-11 , IPI80N06S4-05 , IPI80N06S4-07 , IPI80N06S4L-05 , IPI80N06S4L-07 , IPI80N08S2-07 .
