IPI80N06S2L-05 Todos los transistores

 

IPI80N06S2L-05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI80N06S2L-05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 55 V

Corriente continua de drenaje (Id): 80 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 230 nC

Resistencia drenaje-fuente RDS(on): 0.0048 Ohm

Empaquetado / Estuche: PGTO262

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IPI80N06S2L-05 Datasheet (PDF)

1.1. ipi80n06s3-07.pdf Size:187K _infineon

IPI80N06S2L-05
IPI80N06S2L-05

IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS®-T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 6.5 mΩ DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche

1.2. ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf Size:170K _infineon

IPI80N06S2L-05
IPI80N06S2L-05

IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking

 1.3. ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf Size:170K _infineon

IPI80N06S2L-05
IPI80N06S2L-05

IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 6.4 m? DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marki

1.4. ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05 green.pdf Size:158K _infineon

IPI80N06S2L-05
IPI80N06S2L-05

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% A

 1.5. ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf Size:132K _infineon

IPI80N06S2L-05
IPI80N06S2L-05

IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100%

1.6. ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08 green.pdf Size:158K _infineon

IPI80N06S2L-05
IPI80N06S2L-05

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

1.7. ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07 green.pdf Size:158K _infineon

IPI80N06S2L-05
IPI80N06S2L-05

IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 6.3 m? DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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