2N5485 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

February 20092N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007

2N/SST5484 SeriesVishay SiliconixN-Channel JFETs2N5484 SST54842N5485 SST54852N5486 SST5486PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N/SST5484 -0.3 to -3 -25 3 12N/SST5485 -0.5 to -4 -25 3.5 42N/SST5486 -2 to -6 -25 4 8FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mi

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2N5484 MMBF54842N5485 MMBF54852N5486 MMBF5486GSG TO-92SSOT-23 DDMark: 6B / 6M / 6HNOTE: Source & Drain are interchangeableN-Channel RF AmplifierThis device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value

2N5486JFET VHF/UHF AmplifiersN-Channel DepletionFeatures Pb-Free Packages are Available*http://onsemi.com1 DRAINMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating Symbol Value Unit3GATEDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGSR 25 Vdc2 SOURCEDrain Current ID 30 mAdcForward Gate Current IG(f) 10 mAdcTotal Device Dissipation @ TC =