2N5485 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

February 2009 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007

2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 -0.3 to -3 -25 3 1 2N/SST5485 -0.5 to -4 -25 3.5 4 2N/SST5486 -2 to -6 -25 4 8 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mi

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2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark 6B / 6M / 6H NOTE Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value

2N5486 JFET VHF/UHF Amplifiers N-Channel Depletion Features Pb-Free Packages are Available* http //onsemi.com 1 DRAIN MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol Value Unit 3 GATE Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGSR 25 Vdc 2 SOURCE Drain Current ID 30 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TC =