IPI80P03P4L-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI80P03P4L-04

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 137 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 2350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm

Encapsulados: TO262

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IPI80P03P4L-04 datasheet

 ..1. Size:173K  infineon
 ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf pdf_icon

IPI80P03P4L-04

IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche

 1.1. Size:168K  infineon
 ipb80p03p4l-07 ipi80p03p4l-07 ipp80p03p4l-07 ipp80p03p4l-07 ipb80p03p4l-07 ipi80p03p4l-07.pdf pdf_icon

IPI80P03P4L-04

IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 6.9 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche

 4.1. Size:169K  infineon
 ipb80p03p4-05 ipi80p03p4-05 ipp80p03p4-05 ipp80p03p4-05 ipb80p03p4-05 ipi80p03p4-05.pdf pdf_icon

IPI80P03P4L-04

IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.7 m DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t

 7.1. Size:290K  infineon
 ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf pdf_icon

IPI80P03P4L-04

IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 7.9 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested

MOSTRAR MÁS

Otros transistores... IPI80N06S2-08, IPI80N06S2L-05, IPI80N06S2L-11, IPI80N06S4-05, IPI80N06S4-07, IPI80N06S4L-05, IPI80N06S4L-07, IPI80N08S2-07, IRF540N, IPI80P03P4L-07, IPI90N04S4-02, IPI90N06S4-04, IPI90N06S4L-04, IPI023NE7N3G, IPI024N06N3G, IPI028N08N3G, IPI030N10N3G