IPI024N06N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI024N06N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 3700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO262

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IPI024N06N3G datasheet

 ..1. Size:999K  infineon
 ipp024n06n3g ipb021n06n3g ipi024n06n3g.pdf pdf_icon

IPI024N06N3G

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 ..2. Size:483K  infineon
 ipb021n06n3g ipi024n06n3g ipp024n06n3g.pdf pdf_icon

IPI024N06N3G

Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 2.1 m DS(on),max (SMD) Optimized technology for DC/DC converters I 120 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanch

 9.1. Size:457K  1
 ipp028n08n3g ipi028n08n3g.pdf pdf_icon

IPI024N06N3G

IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 2.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP02CN08N Pb-free lead plating; RoHS compliant Qualified ac

 9.2. Size:836K  infineon
 ipp023ne7n3g ipi023ne7n3g.pdf pdf_icon

IPI024N06N3G

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MOSTRAR MÁS

Otros transistores... IPI80N06S4L-07, IPI80N08S2-07, IPI80P03P4L-04, IPI80P03P4L-07, IPI90N04S4-02, IPI90N06S4-04, IPI90N06S4L-04, IPI023NE7N3G, IRF1404, IPI028N08N3G, IPI030N10N3G, IPI032N06N3G, IPI034NE7N3G, IPI037N06L3G, IPI037N08N3G, IPI040N06N3G, IPI041N12N3G