IPI075N15N3G Todos los transistores

 ..1. Size:739K  infineon
 ipb072n15n3g ipp075n15n3g ipi075n15n3g.pdf

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1

 3.1. Size:424K  infineon
 ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 7.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar

 3.2. Size:286K  inchange semiconductor
 ipi075n15n3.pdf

isc N-Channel MOSFET Transistor IPI075N15N3 FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.1. Size:1551K  1
 ipi076n15n5.pdf

IPI076N15N5 MOSFET I -PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q rr) 175 C operating temperature Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC1) for target application 2 3 Ideal for high-frequency switch

 9.2. Size:1021K  infineon
 ipp070n08n3 ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 9.3. Size:573K  infineon
 ipp072n10n3g ipi072n10n3g.pdf

$$ " " $ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1 D Q ' 381>>5?B=1

 9.4. Size:571K  infineon
 ipp076n12n3g ipi076n12n3g.pdf

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 9.5. Size:545K  infineon
 ipi076n12n3g ipp076n12n3g.pdf

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 7.6 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

 9.6. Size:1013K  infineon
 ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 9.7. Size:894K  infineon
 ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf

IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1

 9.8. Size:316K  infineon
 ipp072n10n3-g ipi072n10n3-g.pdf

IPP072N10N3 G IPI072N10N3 G OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 7.2 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Id

 9.9. Size:261K  inchange semiconductor
 ipi072n10n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI072N10N3 FEATURES Static drain-source on-resistance RDS(on) 7.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(

 9.10. Size:287K  inchange semiconductor
 ipi076n15n5.pdf

isc N-Channel MOSFET Transistor IPI076N15N5 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 9.11. Size:271K  inchange semiconductor
 ipi076n12n3.pdf

isc N-Channel MOSFET Transistor IPI076N12N3 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM