IPI120N06S4-H1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI120N06S4-H1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 4120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO262

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IPI120N06S4-H1 datasheet

 ..1. Size:174K  infineon
 ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf pdf_icon

IPI120N06S4-H1

IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 ..2. Size:170K  infineon
 ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf pdf_icon

IPI120N06S4-H1

IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 2.1. Size:170K  infineon
 ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf pdf_icon

IPI120N06S4-H1

IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 2.2. Size:170K  infineon
 ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf pdf_icon

IPI120N06S4-H1

IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.4 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

MOSTRAR MÁS

Otros transistores... IPI086N10N3G, IPI100N04S4-H2, IPI100N08N3G, IPI110N20N3G, IPI111N15N3G, IPI120N04S4-01, IPI120N04S4-02, IPI120N06S4-02, AO3401, IPI126N10N3G, IPI139N08N3G, IPI147N12N3G, IPI180N10N3G, IPI200N15N3G, IPI200N25N3G, IPI26CN10NG, IPI320N20N3G