IPI126N10N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPI126N10N3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0126 Ohm
   Paquete / Cubierta: TO262

Búsqueda de reemplazo de MOSFET IPI126N10N3G

IPI126N10N3G Datasheet (PDF)

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ipp126n10n3g ipb123n10n3g ipi126n10n3g.pdf

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9.1. Size:225K infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

9.2. Size:237K infineon
ipb120p04p4-04 ipi120p04p4-04 ipp120p04p4-04.pdf

IPB120P04P4-04IPI120P04P4-04, IPP120P04P4-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.5mWID -120 AFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

9.3. Size:170K infineon
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

9.4. Size:858K infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

9.5. Size:623K infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

9.6. Size:159K infineon
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf

IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

9.7. Size:211K infineon
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf

IPB120N08S4-04IPI120N08S4-04, IPP120N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 4.1mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

9.8. Size:549K infineon
ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf

IPB12CNE8N G IPD12CNE8N GIPI12CNE8N G IPP12CNE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1

9.9. Size:430K infineon
ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03.pdf

IPB120P04P4L-03IPI120P04P4L-03, IPP120P04P4L-03OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.1mWID -120 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test

9.10. Size:174K infineon
ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf

IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

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ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf

IPB120N10S4-03IPI120N10S4-03, IPP120N10S4-03OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 3.5mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

9.13. Size:164K infineon
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IPB120N04S3-02IPI120N04S3-02, IPP120N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.0mDS(on),maxI 120 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rd

9.15. Size:170K infineon
ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf

IPB120N06S4-02IPI120N06S4-02, IPP120N06S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.4mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

9.16. Size:159K infineon
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IPB120N04S4-01IPI120N04S4-01, IPP120N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.5mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

9.17. Size:386K infineon
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf

IPB120N10S4-05IPI120N10S4-05, IPP120N10S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 5.0mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

9.18. Size:256K inchange semiconductor
ipi12cn10ng.pdf

Isc N-Channel MOSFET Transistor IPI12CN10NGFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFU025 | KQB6N70

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