IPI50R140CP Todos los transistores

 

IPI50R140CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI50R140CP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 192 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET IPI50R140CP

 

IPI50R140CP Datasheet (PDF)

 ..1. Size:537K  infineon
ipi50r140cp.pdf

IPI50R140CP
IPI50R140CP

IPI50R140CPCIMOS #:A0

 ..2. Size:286K  inchange semiconductor
ipi50r140cp.pdf

IPI50R140CP
IPI50R140CP

isc N-Channel MOSFET Transistor IPI50R140CPFEATURESStatic drain-source on-resistance:RDS(on) 0.14Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 7.1. Size:536K  infineon
ipi50r199cp.pdf

IPI50R140CP
IPI50R140CP

IPI50R199CPCIMOSE #:A0

 7.2. Size:208K  inchange semiconductor
ipi50r199cp.pdf

IPI50R140CP
IPI50R140CP

Isc N-Channel MOSFET Transistor IPI50R199CPFEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 8.1. Size:2917K  infineon
ipi50r380ce.pdf

IPI50R140CP
IPI50R140CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

 8.2. Size:546K  infineon
ipi50r350cp rev20a.pdf

IPI50R140CP
IPI50R140CP

IPI50R350CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 U )DK:GH ;>H / L ., + gR 0. 50 DS(on) maxU 2 AHF6 ADK HMU -7 ;F:: A:69 EA6H>C6CH PGTO2621)U . I6Ai;>:9 688DF9>CH8=

 8.3. Size:535K  infineon
ipi50r299cp.pdf

IPI50R140CP
IPI50R140CP

IPI50R299CPCIMOSE #:A0

 8.4. Size:547K  infineon
ipi50r399cp rev20.pdf

IPI50R140CP
IPI50R140CP

IPI50R399CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 560 V!0 V )DL:HI ;>I / M ., + gR 0. 99 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI PGTO2621)V . J6Ai;>:9 688DG9>CI8=>C

 8.5. Size:547K  infineon
ipi50r250cp.pdf

IPI50R140CP
IPI50R140CP

IPI50R250CPCIMOS #:A0

 8.6. Size:287K  inchange semiconductor
ipi50r399cp.pdf

IPI50R140CP
IPI50R140CP

isc N-Channel MOSFET Transistor IPI50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.7. Size:286K  inchange semiconductor
ipi50r299cp.pdf

IPI50R140CP
IPI50R140CP

isc N-Channel MOSFET Transistor IPI50R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.8. Size:287K  inchange semiconductor
ipi50r350cp.pdf

IPI50R140CP
IPI50R140CP

isc N-Channel MOSFET Transistor IPI50R350CPFEATURESStatic drain-source on-resistance:RDS(on) 0.35Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.9. Size:270K  inchange semiconductor
ipi50r250cp.pdf

IPI50R140CP
IPI50R140CP

isc N-Channel MOSFET Transistor IPI50R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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