IPI60R520CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPI60R520CP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 32 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO262

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IPI60R520CP Datasheet (PDF)

..1. Size:540K infineon
ipi60r520cp.pdf pdf_icon

IPI60R520CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262

..2. Size:287K inchange semiconductor
ipi60r520cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R520CPFEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

8.1. Size:1201K infineon
ipi60r380c6.pdf pdf_icon

MOSFET+ =L9D - PA

8.2. Size:325K infineon
ipi60r099cpa.pdf pdf_icon

IPI60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best Rds,on in TO262 Ultra low gate chargePG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A

8.3. Size:547K infineon
ipi60r165cp.pdf pdf_icon

IPI60R165CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"%

8.4. Size:1495K infineon
ipi60r190c6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

8.5. Size:620K infineon
ipi60r099cp.pdf pdf_icon

IPI60R099CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Worldwide best R in TO220ds,onR 0.099DS(on),max Ultra low gate chargeQ 60 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO262-3-1 Pb-free lead plating; RoHS compliantCoolMOS CP is specially

8.6. Size:541K infineon
ipi60r600cp.pdf pdf_icon

IPI60R600CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 :

8.7. Size:317K infineon
ipi60r385cp.pdf pdf_icon

IPI60R385CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RON x QgR 0.385DS(on),max Ultra low gate chargeQ 17 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO262 Pb-free lead plating; RoHS compliantCoolMOS CP is specially desig

8.8. Size:550K infineon
ipi60r199cpa.pdf pdf_icon

IPI60R199CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"% #

8.9. Size:544K infineon
ipi60r199cp.pdf pdf_icon

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8.10. Size:1214K infineon
ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to

8.11. Size:285K infineon
ipi60r099cp rev20 a.pdf pdf_icon

8.12. Size:1432K infineon
ipi60r280c6.pdf pdf_icon

MOSFET+ =L9D - PA

8.13. Size:1368K infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

8.14. Size:547K infineon
ipi60r125cp.pdf pdf_icon

IPI60R125CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO220PGTO2

8.15. Size:556K infineon
ipi60r250cp.pdf pdf_icon

IPI60R250CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ::

8.16. Size:556K infineon
ipi60r299cp.pdf pdf_icon

IPI60R299CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"%

8.17. Size:1587K infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf pdf_icon

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

8.18. Size:264K inchange semiconductor
ipi60r380c6.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPI60R380C6FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

8.19. Size:286K inchange semiconductor
ipi60r165cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R165CPFEATURESStatic drain-source on-resistance:RDS(on) 0.165Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Ultra low gate charge High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

8.20. Size:264K inchange semiconductor
ipi60r190c6.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPI60R190C6FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

8.21. Size:287K inchange semiconductor
ipi60r099cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R099CPFEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

8.22. Size:286K inchange semiconductor
ipi60r600cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R600CPFEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

8.23. Size:287K inchange semiconductor
ipi60r385cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R385CPFEATURESStatic drain-source on-resistance:RDS(on) 0.385Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

8.24. Size:286K inchange semiconductor
ipi60r199cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

8.25. Size:286K inchange semiconductor
ipi60r280c6.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of useABSOLUTE MA

8.26. Size:286K inchange semiconductor
ipi60r125cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R125CPFEATURESStatic drain-source on-resistance:RDS(on) 0.125Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

8.27. Size:287K inchange semiconductor
ipi60r250cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

8.28. Size:287K inchange semiconductor
ipi60r299cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPI60R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Otros transistores... IPI60R165CP , IPI60R190C6 , IPI60R199CP , IPI60R250CP , IPI60R280C6 , IPI60R299CP , IPI60R380C6 , IPI60R385CP , 7N60 , IPI60R600CP , IPI65R280C6 , IPI65R380C6 , IPI65R600C6 , IPI65R660CFD , IPI70N04S4-06 , IPI80CN10NG , IPI80N04S4-03 .