IPI90R500C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI90R500C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 83 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO262

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IPI90R500C3 datasheet

 ..1. Size:259K  infineon
 ipi90r500c3.pdf pdf_icon

IPI90R500C3

IPI90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 90

 8.1. Size:253K  infineon
 ipi90r340c3.pdf pdf_icon

IPI90R500C3

IPI90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak) PG-TO262 DS

 8.2. Size:254K  infineon
 ipi90r1k0c3.pdf pdf_icon

IPI90R500C3

IPI90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 1.0 DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 90

 8.3. Size:260K  infineon
 ipi90r1k2c3.pdf pdf_icon

IPI90R500C3

IPI90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 900V

MOSTRAR MÁS

Otros transistores... IPI65R600C6, IPI65R660CFD, IPI70N04S4-06, IPI80CN10NG, IPI80N04S4-03, IPI90R1K0C3, IPI90R1K2C3, IPI90R340C3, IRFB31N20D, IPI90R800C3, IPL60R199CP, IPL60R299CP, IPL60R385CP, IPP100N04S2-04, IPP100N04S2L-03, IPP100N04S3-03, IPP100N06S2-05