IPP100N04S3-03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPP100N04S3-03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 214 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 2000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO220

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IPP100N04S3-03 Datasheet (PDF)

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ipb100n04s3-03 ipi100n04s3-03 ipp100n04s3-03 ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf

IPB100N04S3-03IPI100N04S3-03, IPP100N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD Version) 2.5mDS(on) I 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(

4.1. Size:159K infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

4.2. Size:153K infineon
ipb100n04s2-04 ipp100n04s2-04 ipp100n04s2-04 ipb100n04s2-04.pdf

IPB100N04S2-04IPP100N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.3mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedT

4.3. Size:135K infineon
ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType

4.4. Size:153K infineon
ipb100n04s2l-03 ipp100n04s2l-03 ipp100n04s2l-03 ipb100n04s2l-03.pdf

IPB100N04S2L-03IPP100N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.0mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

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