IPP22N03S4L-15 Todos los transistores

 

IPP22N03S4L-15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP22N03S4L-15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0149 Ohm
   Paquete / Cubierta: TO220
 

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IPP22N03S4L-15 Datasheet (PDF)

 ..1. Size:188K  infineon
 ipb22n03s4l-15 ipi22n03s4l-15 ipp22n03s4l-15 ipp22n03s4l ipb22n03s4l ipi22n03s4l.pdf pdf_icon

IPP22N03S4L-15

IPB22N03S4L-15IPI22N03S4L-15, IPP22N03S4L-15OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 14.6mDS(on),max I 22 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low

 9.1. Size:1254K  infineon
 ipp220n25nfd.pdf pdf_icon

IPP22N03S4L-15

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTMFD Power-Transistor, 250 VIPP220N25NFDData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTMFD Power-Transistor, 250 VIPP220N25NFDTO-220-31 DescriptiontabFeatures N-channel, normal level Fast Diode (FD) with reduced Qrr Optimized for hard commutation ruggedness Ver

 9.2. Size:244K  inchange semiconductor
 ipp220n25nfd.pdf pdf_icon

IPP22N03S4L-15

isc N-Channel MOSFET Transistor IPP220N25NFDIIPP220N25NFDFEATURESStatic drain-source on-resistance:RDS(on) 22mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for hard commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Otros transistores... IPP100N06S2-05 , IPP100N06S2L-05 , IPP100N08S2-07 , IPP100N08S2L-07 , IPP100N10S3-05 , IPP100P03P3L-04 , IPP120N04S3-02 , IPP120N06S4-03 , AO3407 , IPP45N06S4-09 , IPP45N06S4L-08 , IPP45P03P4L-11 , IPP47N10S-33 , IPP47N10SL-26 , IPP50N10S3L-16 , IPP70N04S3-07 , IPP70N10S3-12 .

History: WMB02DN10T1 | TPC6003 | SI4558DY | GT110N06D5 | KTK5132V

 

 
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