IPP22N03S4L-15 Todos los transistores

 

IPP22N03S4L-15 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP22N03S4L-15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0149 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET IPP22N03S4L-15

 

Principales características: IPP22N03S4L-15

 ..1. Size:188K  infineon
ipb22n03s4l-15 ipi22n03s4l-15 ipp22n03s4l-15 ipp22n03s4l ipb22n03s4l ipi22n03s4l.pdf pdf_icon

IPP22N03S4L-15

IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 14.6 m DS(on),max I 22 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low

 9.1. Size:1254K  infineon
ipp220n25nfd.pdf pdf_icon

IPP22N03S4L-15

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTMFD Power-Transistor, 250 V IPP220N25NFD Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTMFD Power-Transistor, 250 V IPP220N25NFD TO-220-3 1 Description tab Features N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness Ver

 9.2. Size:244K  inchange semiconductor
ipp220n25nfd.pdf pdf_icon

IPP22N03S4L-15

isc N-Channel MOSFET Transistor IPP220N25NFD IIPP220N25NFD FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for hard commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

Otros transistores... IPP100N06S2-05 , IPP100N06S2L-05 , IPP100N08S2-07 , IPP100N08S2L-07 , IPP100N10S3-05 , IPP100P03P3L-04 , IPP120N04S3-02 , IPP120N06S4-03 , AO4407A , IPP45N06S4-09 , IPP45N06S4L-08 , IPP45P03P4L-11 , IPP47N10S-33 , IPP47N10SL-26 , IPP50N10S3L-16 , IPP70N04S3-07 , IPP70N10S3-12 .

History: E25N10 | CEM2187 | SSH15N55A | DHS044N12U | ATM9435PPA | SSD50P03-09D | DJC070N60F

 

 
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