IPP50N10S3L-16 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP50N10S3L-16
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 5 nS
Cossⓘ - Capacitancia de salida: 730 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0157 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IPP50N10S3L-16 MOSFET
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IPP50N10S3L-16 datasheet
..1. Size:186K infineon
ipb50n10s3l-16 ipi50n10s3l-16 ipp50n10s3l-16 ipp50n10s3l ipb50n10s3l ipi50n10s3l-16.pdf 
IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 15.4 m DS(on),max I 50 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval
7.1. Size:404K infineon
ipb50n12s3l-15 ipi50n12s3l-15 ipp50n12s3l-15.pdf
IPB50N12S3L-15 IPI50N12S3L-15, IPP50N12S3L-15 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temper
9.1. Size:2210K infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s
9.4. Size:902K infineon
ipb50cn10ng ipd49cn10ng ipi50cn10ng ipp50cn10ng.pdf
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9.6. Size:1874K infineon
ipw50r190ce ipp50r190ce.pdf
IPW50R190CE, IPP50R190CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co
9.8. Size:1484K infineon
ipp50r500ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R500CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPP50R500CE TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and
9.9. Size:2917K infineon
ipp50r380ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S
9.13. Size:2146K infineon
ipw50r280ce ipp50r280ce.pdf
IPW50R280CE, IPP50R280CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co
9.14. Size:2141K infineon
ipp50r280ce ipw50r280ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction
9.15. Size:245K inchange semiconductor
ipp50r299cp.pdf
isc N-Channel MOSFET Transistor IPP50R299CP IIPP50R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.16. Size:245K inchange semiconductor
ipp50r520cp.pdf
isc N-Channel MOSFET Transistor IPP50R520CP IIPP50R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.17. Size:245K inchange semiconductor
ipp50r399cp.pdf
isc N-Channel MOSFET Transistor IPP50R399CP IIPP50R399CP FEATURES Static drain-source on-resistance RDS(on) 0.399 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.18. Size:245K inchange semiconductor
ipp50r250cp.pdf
isc N-Channel MOSFET Transistor IPP50R250CP IIPP50R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.19. Size:207K inchange semiconductor
ipp50r500ce.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP50R500CE FEATURES With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABS
9.20. Size:245K inchange semiconductor
ipp50r380ce.pdf
isc N-Channel MOSFET Transistor IPP50R380CE IIPP50R380CE FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S
9.21. Size:245K inchange semiconductor
ipp50r199cp.pdf
isc N-Channel MOSFET Transistor IPP50R199CP IIPP50R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.22. Size:244K inchange semiconductor
ipp50r280ce.pdf
isc N-Channel MOSFET Transistor IPP50R280CE IIPP50R280CE FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S
9.23. Size:245K inchange semiconductor
ipp50r350cp.pdf
isc N-Channel MOSFET Transistor IPP50R350CP IIPP50R350CP FEATURES Static drain-source on-resistance RDS(on) 0.35 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.24. Size:245K inchange semiconductor
ipp50r140cp.pdf
isc N-Channel MOSFET Transistor IPP50R140CP IIPP50R140CP FEATURES Static drain-source on-resistance RDS(on) 0.14 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.25. Size:245K inchange semiconductor
ipp50r190ce.pdf
isc N-Channel MOSFET Transistor IPP50R190CE IIPP50R190CE FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S
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