IPP70N10S3-12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPP70N10S3-12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 940 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0116 Ohm
   Paquete / Cubierta: TO220

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IPP70N10S3-12 Datasheet (PDF)

..1. Size:186K infineon
ipb70n10s3-12 ipi70n10s3-12 ipp70n10s3-12 ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf

IPB70N10S3-12IPI70N10S3-12, IPP70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 11.3mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanc

4.1. Size:160K infineon
ipb70n10s3l-12 ipi70n10s3l-12 ipp70n10s3l-12.pdf

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mWDS(on),maxI 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche

4.2. Size:187K infineon
ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalan

5.1. Size:124K infineon
ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf

IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7

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