IPP70N10SL-16 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP70N10SL-16
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 250 nS
Cossⓘ - Capacitancia de salida: 640 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO220
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IPP70N10SL-16 Datasheet (PDF)
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IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mWDS(on),maxI 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche
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Otros transistores... IPP45N06S4L-08 , IPP45P03P4L-11 , IPP47N10S-33 , IPP47N10SL-26 , IPP50N10S3L-16 , IPP70N04S3-07 , IPP70N10S3-12 , IPP70N10S3L-12 , IRF540 , IPP77N06S2-12 , IPP80N03S4L-03 , IPP80N03S4L-04 , IPP80N04S2-04 , IPP80N04S2-H4 , IPP80N04S2L-03 , IPP80N04S3-03 , IPP80N04S3-04 .
History: IRFHM7194 | SSG6612N | HRLF190N03K | BUK455-60A | J112RLRAG | SVG104R5NS | ZXMP10A17E6
History: IRFHM7194 | SSG6612N | HRLF190N03K | BUK455-60A | J112RLRAG | SVG104R5NS | ZXMP10A17E6



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