IPP80N04S2-04 Todos los transistores

 

IPP80N04S2-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP80N04S2-04
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 2200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: TO220
 

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IPP80N04S2-04 Datasheet (PDF)

 ..1. Size:159K  infineon
 ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf pdf_icon

IPP80N04S2-04

IPB80N04S2-04IPP80N04S2-04, IPI80N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.4mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 3.1. Size:190K  infineon
 ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf pdf_icon

IPP80N04S2-04

IPB80N04S2-H4IPP80N04S2-H4, IPI80N04S2-H4OptiMOS Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.7mDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre

 4.1. Size:153K  infineon
 ipp80n04s2l-03 ipb80n04s2l-03.pdf pdf_icon

IPP80N04S2-04

IPB80N04S2L-03IPP80N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 5.1. Size:160K  infineon
 ipb80n04s4-04 ipi80n04s4-04 ipp80n04s4-04 ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf pdf_icon

IPP80N04S2-04

IPB80N04S4-04IPI80N04S4-04, IPP80N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.2mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

MOSTRAR MÁS

Otros transistores... IPP50N10S3L-16 , IPP70N04S3-07 , IPP70N10S3-12 , IPP70N10S3L-12 , IPP70N10SL-16 , IPP77N06S2-12 , IPP80N03S4L-03 , IPP80N03S4L-04 , IRFZ44 , IPP80N04S2-H4 , IPP80N04S2L-03 , IPP80N04S3-03 , IPP80N04S3-04 , IPP80N04S3-06 , IPP80N04S3-H4 , IPP80N04S4-04 , IPP80N04S4L-04 .

History: KHB019N20F1 | WMS15P02T1 | IPN50R800CE | IPN50R1K4CE | HRP90N75K | SRT04N016L | IRFPG50

 

 
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