IPP80N04S2L-03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP80N04S2L-03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 2200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: TO220

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IPP80N04S2L-03 datasheet

 ..1. Size:153K  infineon
 ipp80n04s2l-03 ipb80n04s2l-03.pdf pdf_icon

IPP80N04S2L-03

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 4.1. Size:159K  infineon
 ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf pdf_icon

IPP80N04S2L-03

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 4.2. Size:190K  infineon
 ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf pdf_icon

IPP80N04S2L-03

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre

 5.1. Size:160K  infineon
 ipb80n04s4-04 ipi80n04s4-04 ipp80n04s4-04 ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf pdf_icon

IPP80N04S2L-03

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P

MOSTRAR MÁS

Otros transistores... IPP70N10S3-12, IPP70N10S3L-12, IPP70N10SL-16, IPP77N06S2-12, IPP80N03S4L-03, IPP80N03S4L-04, IPP80N04S2-04, IPP80N04S2-H4, IRF1404, IPP80N04S3-03, IPP80N04S3-04, IPP80N04S3-06, IPP80N04S3-H4, IPP80N04S4-04, IPP80N04S4L-04, IPP80N06S2-05, IPP80N06S2-07