IPP80N06S2-08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP80N06S2-08

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 215 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 740 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de IPP80N06S2-08 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPP80N06S2-08 datasheet

 ..1. Size:158K  infineon
 ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf pdf_icon

IPP80N06S2-08

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 2.1. Size:155K  infineon
 ipp80n06s2-05 ipb80n06s2-05.pdf pdf_icon

IPP80N06S2-08

IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type

 2.2. Size:158K  infineon
 ipb80n06s2-07 ipp80n06s2-07 ipi80n06s2-07 ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf pdf_icon

IPP80N06S2-08

IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 6.3 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 2.3. Size:155K  infineon
 ipb80n06s2-09 ipp80n06s2-09 ipp80n06s2-09 ipb80n06s2-09.pdf pdf_icon

IPP80N06S2-08

IPB80N06S2-09 IPP80N06S2-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 8.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type

MOSTRAR MÁS

Otros transistores... IPP80N04S3-03, IPP80N04S3-04, IPP80N04S3-06, IPP80N04S3-H4, IPP80N04S4-04, IPP80N04S4L-04, IPP80N06S2-05, IPP80N06S2-07, AON6414A, IPP80N06S2-09, IPP80N06S2-H5, IPP80N06S2L-05, IPP80N06S2L-06, IPP80N06S2L-07, IPP80N06S2L-09, IPP80N06S2L-11, IPP80N06S2L-H5