IPP80N06S2L-07 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP80N06S2L-07

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 210 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 740 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO220

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IPP80N06S2L-07 datasheet

 ..1. Size:155K  infineon
 ipb80n06s2l-07 ipp80n06s2l-07 ipp80n06s2l-07 ipb80n06s2l-07.pdf pdf_icon

IPP80N06S2L-07

IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 ..2. Size:828K  cn vbsemi
 ipp80n06s2l-07.pdf pdf_icon

IPP80N06S2L-07

IPP80N06S2L-07 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 120 Material categorization 60 0.008 at VGS = 7.5 V 100 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Li

 1.1. Size:158K  infineon
 ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf pdf_icon

IPP80N06S2L-07

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l

 1.2. Size:155K  infineon
 ipb80n06s2l-09 ipp80n06s2l-09 ipp80n06s2l-09 ipb80n06s2l-09.pdf pdf_icon

IPP80N06S2L-07

IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 8.3 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

MOSTRAR MÁS

Otros transistores... IPP80N04S4L-04, IPP80N06S2-05, IPP80N06S2-07, IPP80N06S2-08, IPP80N06S2-09, IPP80N06S2-H5, IPP80N06S2L-05, IPP80N06S2L-06, 7N65, IPP80N06S2L-09, IPP80N06S2L-11, IPP80N06S2L-H5, IPP80N06S4-05, IPP80N06S4-07, IPP80N06S4L-05, IPP80N06S4L-07, IPP80N08S2-07