APT8067HVR Todos los transistores

 

APT8067HVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8067HVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 11.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.67 Ohm

Empaquetado / Estuche: TO258

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APT8067HVR Datasheet (PDF)

1.1. apt8067hvr.pdf Size:60K _apt

APT8067HVR
APT8067HVR

APT8067HVR 800V 11.5A 0.670Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

4.1. apt8065avr.pdf Size:60K _apt

APT8067HVR
APT8067HVR

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.2. apt8065bvfr.pdf Size:63K _apt

APT8067HVR
APT8067HVR

APT8065BVFR 800V 13A 0.650Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

 4.3. apt8065svr.pdf Size:63K _apt

APT8067HVR
APT8067HVR

APT8065SVR 800V 13A 0.650Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.4. apt8065bvr.pdf Size:60K _apt

APT8067HVR
APT8067HVR

APT8065BVR 800V 13A 0.650Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

 4.5. apt8065.pdf Size:60K _apt

APT8067HVR
APT8067HVR

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

Otros transistores... APT8030LVR , APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , IRF530 , APT8075BN , APT8075BVR , BF1100 , BF1100R , BF1100WR , BF1101 , BF1101R , BF1101WR .

 

 
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