IPP80N06S4L-05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP80N06S4L-05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 1350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm

Encapsulados: TO220

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IPP80N06S4L-05 datasheet

 ..1. Size:174K  infineon
 ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf pdf_icon

IPP80N06S4L-05

IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 4.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 ..2. Size:170K  infineon
 ipb80n06s4l-05 ipi80n06s4l-05 ipp80n06s4l-05.pdf pdf_icon

IPP80N06S4L-05

IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 4.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 1.1. Size:170K  infineon
 ipb80n06s4l-07 ipi80n06s4l-07 ipp80n06s4l-07 ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf pdf_icon

IPP80N06S4L-05

IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 6.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 4.1. Size:175K  infineon
 ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf pdf_icon

IPP80N06S4L-05

IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.1 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested T

MOSTRAR MÁS

Otros transistores... IPP80N06S2L-05, IPP80N06S2L-06, IPP80N06S2L-07, IPP80N06S2L-09, IPP80N06S2L-11, IPP80N06S2L-H5, IPP80N06S4-05, IPP80N06S4-07, STP75NF75, IPP80N06S4L-07, IPP80N08S2-07, IPP80N08S2L-07, IPP80P03P4L-04, IPP80P03P4L-07, IPP90N04S4-02, IPP90N06S4-04, IPP90N06S4L-04