IPP037N08N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP037N08N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 79 nS

Cossⓘ - Capacitancia de salida: 1640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00375 Ohm

Encapsulados: TO220

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IPP037N08N3G datasheet

 ..1. Size:1018K  infineon
 ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3G

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 + D n) #) ' ' ! Q ' 381>>5?B=1

 ..2. Size:494K  infineon
 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3G

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 3.1. Size:246K  inchange semiconductor
 ipp037n08n3.pdf pdf_icon

IPP037N08N3G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP037N08N3 IIPP037N08N3 FEATURES Static drain-source on-resistance RDS(on) 3.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUT

 6.1. Size:475K  infineon
 ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

IPP037N08N3G

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06

MOSTRAR MÁS

Otros transistores... IPP023NE7N3G, IPP024N06N3G, IPP028N08N3G, IPP030N10N3G, IPP032N06N3G, IPP034N03LG, IPP034NE7N3G, IPP037N06L3G, IRF530, IPP039N04LG, IPP040N06N3G, IPP041N04NG, IPP041N12N3G, IPP042N03LG, IPP045N10N3G, IPP048N04NG, IPP048N12N3G