IPP039N04LG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP039N04LG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.4 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm

Encapsulados: TO220

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IPP039N04LG datasheet

 ..1. Size:264K  infineon
 ipp039n04lg ipb039n04lg.pdf pdf_icon

IPP039N04LG

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 4.1. Size:344K  infineon
 ipb039n04l-g ipp039n04l-g.pdf pdf_icon

IPP039N04LG

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 4.2. Size:246K  inchange semiconductor
 ipp039n04l.pdf pdf_icon

IPP039N04LG

isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04L FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(T

 7.1. Size:1541K  infineon
 ipp039n10n5.pdf pdf_icon

IPP039N04LG

IPP039N10N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 100 V tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free

MOSTRAR MÁS

Otros transistores... IPP024N06N3G, IPP028N08N3G, IPP030N10N3G, IPP032N06N3G, IPP034N03LG, IPP034NE7N3G, IPP037N06L3G, IPP037N08N3G, CS150N03A8, IPP040N06N3G, IPP041N04NG, IPP041N12N3G, IPP042N03LG, IPP045N10N3G, IPP048N04NG, IPP048N12N3G, IPP04CN10NG