IPP062NE7N3G Datasheet. Equivalente

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 ipp062ne7n3 ipp062ne7n3g.pdf

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 3.1. Size:245K  inchange semiconductor
 ipp062ne7n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP062NE7N3 IIPP062NE7N3 FEATURES Static drain-source on-resistance RDS(on) 6.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

 9.1. Size:519K  infineon
 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf

IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 6.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 9.2. Size:614K  infineon
 ipp065n03l.pdf

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 9.3. Size:770K  infineon
 ipp06cn10n.pdf

IPB06CN10N G IPI06CN10N G IPP06CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 6.2 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D DE2?46 R DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7

 9.4. Size:556K  infineon
 ipp065n04n.pdf

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 9.5. Size:587K  infineon
 ipp060n06n.pdf

Type IPP060N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 6.0 mW Superior thermal resistance ID 45 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Hal

 9.6. Size:738K  infineon
 ipb065n06lg ipp065n06lg.pdf

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 9.7. Size:545K  infineon
 ipp06cn10l1.pdf

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 9.8. Size:245K  inchange semiconductor
 ipp065n03l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP065N03L IIPP065N03L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

 9.9. Size:245K  inchange semiconductor
 ipp060n06n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP060N06N IIPP060N06N FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M