IPP062NE7N3G Todos los transistores

## ! ! TM # A0 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC D Q H35

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP062NE7N3 IIPP062NE7N3 FEATURES Static drain-source on-resistance RDS(on) 6.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 6.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

pe %% # ! % # ! % (>.;?6?@ %>E Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m - @? >2H Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? 7B66 244@

IPB06CN10N G IPI06CN10N G IPP06CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 6.2 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D DE2?46 R DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7

pe $$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 4 D R 3DE DH;E5 ;@9 &( , - 8AC ,&), m , A@ ?3I R ( BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD D 1) R * F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D R ' 5 3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E Type #)) ' ' !

Type IPP060N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 6.0 mW Superior thermal resistance ID 45 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant Hal

IPB065N06L G IPP065N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G P ( 381>>581>35=5>C

%% # ! % (>.;?6?@ %>E Features 1 D S ) 5 3@@7> >A9;5 >7H7> m . A@ ?3J S J57>>7@F 93F7 5 3D97 J BDA6G5F !* ( D n) 1 D S 07DK >AI A@ D7E;EF3@57 D n) S V AB7D3F;@9 F7?B7D3FGD7 S +4 8D77 >736 B>3F;@9 - A#. 5A?B>;3@F 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ S $673> 8AD ;9 8D7CG7@5K EI;F5 ;@9 3@6 EK@5 DA@AGE D75F;8;53F;A@ pe $++

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP065N03L IIPP065N03L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP060N06N IIPP060N06N FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M