IPP120N04S4-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP120N04S4-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 2450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de IPP120N04S4-01 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPP120N04S4-01 datasheet

 ..1. Size:159K  infineon
 ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf pdf_icon

IPP120N04S4-01

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.5 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 1.1. Size:159K  infineon
 ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf pdf_icon

IPP120N04S4-01

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 1.2. Size:164K  infineon
 ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf pdf_icon

IPP120N04S4-01

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 4.1. Size:191K  infineon
 ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf pdf_icon

IPP120N04S4-01

IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 2.0 m DS(on),max I 120 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rd

MOSTRAR MÁS

Otros transistores... IPP096N03LG, IPP100N04S4-H2, IPP100N08N3G, IPP110N06LG, IPP110N20N3G, IPP111N15N3G, IPP114N03LG, IPP114N12N3G, 60N06, IPP120N04S4-02, IPP120N06NG, IPP120N06S4-02, IPP120N06S4-H1, IPP126N10N3G, IPP12CN10LG, IPP12CN10NG, IPP139N08N3G