BF1101WR Todos los transistores

 

BF1101WR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF1101WR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Cossⓘ - Capacitancia de salida: 2.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
   Paquete / Cubierta: SOT343R
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BF1101WR Datasheet (PDF)

 ..1. Size:135K  philips
bf1101 bf1101r bf1101wr 2.pdf pdf_icon

BF1101WR
BF1101WR

DISCRETE SEMICONDUCTORSDATA SHEETBF1101; BF1101R; BF1101WRN-channel dual-gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1999 Feb 01Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to i

 8.1. Size:373K  philips
bf1101 r wr.pdf pdf_icon

BF1101WR
BF1101WR

DISCRETE SEMICONDUCTORS DATA SHEETBF1101; BF1101R; BF1101WRN-channel dual-gate MOS-FETsProduct specification 1999 May 14Supersedes data of 1999 Feb 01NXP Semiconductors Product specificationBF1101; BF1101R;N-channel dual-gate MOS-FETsBF1101WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

 9.1. Size:439K  philips
bf1100wr.pdf pdf_icon

BF1101WR
BF1101WR

DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain

 9.2. Size:351K  philips
bf1105 r wr.pdf pdf_icon

BF1101WR
BF1101WR

DISCRETE SEMICONDUCTORS DATA SHEETBF1105; BF1105R; BF1105WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 02Supersedes data of 1997 Dec 01NXP Semiconductors Product specificationBF1105; BF1105R;N-channel dual-gate MOS-FETsBF1105WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to

Otros transistores... APT8067HVR , APT8075BN , APT8075BVR , BF1100 , BF1100R , BF1100WR , BF1101 , BF1101R , IRF9540 , BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , BF245A .

 

 
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