IPP50R140CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP50R140CPCIMOSTM #:A0

isc N-Channel MOSFET Transistor IPP50R140CPIIPP50R140CPFEATURESStatic drain-source on-resistance:RDS(on) 0.14Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

IPW50R190CE, IPP50R190CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

IPP50R199CPCIMOSTM #:A0

isc N-Channel MOSFET Transistor IPP50R199CPIIPP50R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor IPP50R190CEIIPP50R190CEFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S