IPP65R380C6 Todos los transistores

 

IPP65R380C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP65R380C6
   Código: 65C6380
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 39 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 41 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220

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IPP65R380C6 Datasheet (PDF)

 ..1. Size:1946K  infineon
ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf

IPP65R380C6
IPP65R380C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Rev. 2.2, 2013-07-31Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MO

 ..2. Size:245K  inchange semiconductor
ipp65r380c6.pdf

IPP65R380C6
IPP65R380C6

isc N-Channel MOSFET Transistor IPP65R380C6IIPP65R380C6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 0.1. Size:2157K  infineon
ipp65r380c62.0.pdf

IPP65R380C6
IPP65R380C6

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

 5.1. Size:1898K  infineon
ipp65r380e6.pdf

IPP65R380C6
IPP65R380C6

MOSFET+ =L9D - PA

 5.2. Size:1960K  infineon
ipd65r380e6 ipp65r380e6 ipa65r380e6.pdf

IPP65R380C6
IPP65R380C6

MOSFET+ =L9D - PA

 5.3. Size:245K  inchange semiconductor
ipp65r380e6.pdf

IPP65R380C6
IPP65R380C6

isc N-Channel MOSFET Transistor IPP65R380E6IIPP65R380E6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

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