IPP65R380E6 Todos los transistores

 ..1. Size:1898K  infineon
 ipp65r380e6.pdf

MOSFET + =L9D - PA

 ..2. Size:1960K  infineon
 ipd65r380e6 ipp65r380e6 ipa65r380e6.pdf

MOSFET + =L9D - PA

 ..3. Size:245K  inchange semiconductor
 ipp65r380e6.pdf

isc N-Channel MOSFET Transistor IPP65R380E6 IIPP65R380E6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL

 5.1. Size:1946K  infineon
 ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO

 5.2. Size:2157K  infineon
 ipp65r380c62.0.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K

 5.3. Size:245K  inchange semiconductor
 ipp65r380c6.pdf

isc N-Channel MOSFET Transistor IPP65R380C6 IIPP65R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL