IPP90R500C3 Todos los transistores

 

IPP90R500C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP90R500C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 156 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 68 nC

Resistencia drenaje-fuente RDS(on): 0.5 Ohm

Empaquetado / Estuche: TO220

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IPP90R500C3 Datasheet (PDF)

1.1. ipp90r500c3 1[1].0.pdf Size:292K _infineon

IPP90R500C3
IPP90R500C3

IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.5 ? DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

1.2. ipp90r500c3.pdf Size:246K _inchange_semiconductor

IPP90R500C3
IPP90R500C3

isc N-Channel MOSFET Transistor IPP90R500C3,IIPP90R500C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.5Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

 4.1. ipp90r1k0c3 1[1].0.pdf Size:287K _infineon

IPP90R500C3
IPP90R500C3

IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 1.0 ? DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

4.2. ipp90r1k2c3 1[1].0.pdf Size:293K _infineon

IPP90R500C3
IPP90R500C3

IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 1.2 ? DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for: Qu

 4.3. ipp90r340c3 1[1].0.pdf Size:286K _infineon

IPP90R500C3
IPP90R500C3

IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 0.34 ? DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on Ultra low gate charge

4.4. ipp90r800c3 1[1].0.pdf Size:286K _infineon

IPP90R500C3
IPP90R500C3

IPP90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.8 ? DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Ultra low gate charge CoolMOS 900V is designed for:

 4.5. ipp90r800c3.pdf Size:260K _inchange_semiconductor

IPP90R500C3
IPP90R500C3

isc N-Channel MOSFET Transistor IPP90R800C3 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL

4.6. ipp90r340c3.pdf Size:245K _inchange_semiconductor

IPP90R500C3
IPP90R500C3

isc N-Channel MOSFET Transistor IPP90R340C3,IIPP90R340C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.34Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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