IPP90R500C3 Todos los transistores

 

IPP90R500C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP90R500C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 156 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 68 nC

Resistencia drenaje-fuente RDS(on): 0.5 Ohm

Empaquetado / Estuche: TO220

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IPP90R500C3 Datasheet (PDF)

1.1. ipp90r500c3 1[1].0.pdf Size:292K _infineon

IPP90R500C3
IPP90R500C3

IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.5 ? DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

4.1. ipp90r800c3 1[1].0.pdf Size:286K _infineon

IPP90R500C3
IPP90R500C3

IPP90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.8 ? DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Ultra low gate charge CoolMOS 900V is designed for:

4.2. ipp90r340c3 1[1].0.pdf Size:286K _infineon

IPP90R500C3
IPP90R500C3

IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 0.34 ? DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on Ultra low gate charge

 4.3. ipp90r1k0c3 1[1].0.pdf Size:287K _infineon

IPP90R500C3
IPP90R500C3

IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 1.0 ? DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

4.4. ipp90r1k2c3 1[1].0.pdf Size:293K _infineon

IPP90R500C3
IPP90R500C3

IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 1.2 ? DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for: Qu

Otros transistores... IPP65R600E6 , IPP65R660CFD , IPP70N04S4-06 , IPP80CN10NG , IPP80N04S4-03 , IPP90R1K0C3 , IPP90R1K2C3 , IPP90R340C3 , IRFP260N , IPP90R800C3 , IPS031N03LG , IPS040N03LG , IPS050N03LG , IPS060N03LG , IPS075N03LG , IPS090N03LG , IPS105N03LG .

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