IPS118N10NG Todos los transistores

 4.1. Size:570K  infineon
 ips118n10n.pdf

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 9.1. Size:587K  infineon
 ipds110n12n3g ips110n12n3g ips110n12n3 ipd110n12n3.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 120V OptiMOS 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.4 Final Industrial & Multimarket IPD110N12N3 G IPS110N12N3 G OptiMOSTM3Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max 11 m Excellent gate charge x R product (FOM) DS(on)

 9.2. Size:261K  inchange semiconductor
 ips110n12n3.pdf

isc N-Channel MOSFET Transistor IPS110N12N3 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE