IPU060N03LG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPU060N03LG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO251

 Búsqueda de reemplazo de IPU060N03LG MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPU060N03LG datasheet

 ..1. Size:523K  infineon
 ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf pdf_icon

IPU060N03LG

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

 4.1. Size:634K  infineon
 ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf pdf_icon

IPU060N03LG

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

 4.2. Size:260K  inchange semiconductor
 ipu060n03l.pdf pdf_icon

IPU060N03LG

isc N-Channel MOSFET Transistor IPU060N03L FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.1. Size:516K  infineon
 ipu06n03lag.pdf pdf_icon

IPU060N03LG

IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 5.7 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance

MOSTRAR MÁS

Otros transistores... IPS105N03LG, IPS110N12N3G, IPS118N10NG, IPS12CN10LG, IPS135N03LG, IPS50R520CP, IPU039N03LG, IPU050N03LG, IRFZ48N, IPU075N03LG, IPU090N03LG, IPU103N08N3G, IPU135N03LG, IPU135N08N3G, IPW50R140CP, IPW50R199CP, IPW50R250CP