IPW50R199CP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPW50R199CP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 139 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm

Encapsulados: TO247

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IPW50R199CP datasheet

 ..1. Size:647K  infineon
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IPW50R199CP

IPW50R199CP TM C IMOSTM # A0

 ..2. Size:243K  inchange semiconductor
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IPW50R199CP

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R199CP IIPW50R199CP FEATURES Static drain-source on-resistance RDS(on) 199m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 6.1. Size:2210K  infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf pdf_icon

IPW50R199CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s

 6.2. Size:1874K  infineon
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IPW50R199CP

IPW50R190CE, IPP50R190CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co

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