IPW60R045CPA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPW60R045CPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 431 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO247

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IPW60R045CPA datasheet

 ..1. Size:378K  infineon
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IPW60R045CPA

IPW60R045CPA CoolMOS Power Transistor Product Summary V 600 V DS R 0.045 DS(on),max Q 150 nC g,typ Features Worldwide best R in TO247 ds,on Ultra low gate charge PG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A

 3.1. Size:644K  infineon
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IPW60R045CPA

IPW60R045CP C IMOS # A0

 3.2. Size:224K  inchange semiconductor
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IPW60R045CPA

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 5.1. Size:1357K  infineon
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IPW60R045CPA

IPW60R045P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

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