BF245B Todos los transistores

 

BF245B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF245B
   Tipo de FET: FET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.015 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.25 V
   Cossⓘ - Capacitancia de salida: 1.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm
   Paquete / Cubierta: TO92
 

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BF245B Datasheet (PDF)

 ..1. Size:97K  philips
 bf245a bf245b bf245c 1.pdf pdf_icon

BF245B

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

 ..2. Size:24K  fairchild semi
 bf245a bf245b bf245c.pdf pdf_icon

BF245B

BF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDerate

 0.1. Size:67K  philips
 bf245a-bf245b-bf245c 2.pdf pdf_icon

BF245B

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

 9.1. Size:286K  philips
 bf245a-b-c.pdf pdf_icon

BF245B

DISCRETE SEMICONDUCTORS DATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effect transistorsProduct specification 1996 Jul 30Supersedes data of April 1995NXP Semiconductors Product specificationBF245A; BF245B;N-channel silicon field-effect transistorsBF245CFEATURES PINNING Interchangeability of drain and source connectionsPIN SYMBOL DESCRIPTION Frequenc

MOSTRAR MÁS

Otros transistores... BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , BF245A , IRFP260 , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B .

 

 
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