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BF245B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF245B
   Tipo de FET: FET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.015 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm
   Paquete / Cubierta: TO92
 

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Principales características: BF245B

 ..1. Size:97K  philips
bf245a bf245b bf245c 1.pdf pdf_icon

BF245B

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING Interchangeability of drain and source connecti

 ..2. Size:24K  fairchild semi
bf245a bf245b bf245c.pdf pdf_icon

BF245B

BF245A/BF245B/BF245C N-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25 C 350 mW Derate

 0.1. Size:67K  philips
bf245a-bf245b-bf245c 2.pdf pdf_icon

BF245B

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING Interchangeability of drain and source connecti

 9.1. Size:286K  philips
bf245a-b-c.pdf pdf_icon

BF245B

DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 NXP Semiconductors Product specification BF245A; BF245B; N-channel silicon field-effect transistors BF245C FEATURES PINNING Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION Frequenc

Otros transistores... BF1102 , BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , BF245A , 2SK3878 , BF245C , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B .

 

 
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