IPW60R075CPA Todos los transistores

 

IPW60R075CPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPW60R075CPA
   Código: 6R075PA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 313 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 87 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de MOSFET IPW60R075CPA

 

IPW60R075CPA Datasheet (PDF)

 ..1. Size:378K  infineon
ipw60r075cpa.pdf

IPW60R075CPA IPW60R075CPA

IPW60R075CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.075DS(on),maxQ 87 nCg,typFeatures Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt ratedPG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Aut

 3.1. Size:533K  infineon
ipw60r075cp rev23.pdf

IPW60R075CPA IPW60R075CPA

IPW60R075CPCIMOS&! #:A0INV . J6A>;>:9 688DG9>CC6CIPGTO247 V 2 AIG6 ADL

 3.2. Size:242K  inchange semiconductor
ipw60r075cp.pdf

IPW60R075CPA IPW60R075CPA

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R075CPIIPW60R075CPFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 6.1. Size:1855K  infineon
ipw60r070p6.pdf

IPW60R075CPA IPW60R075CPA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPW60R070P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R070P6TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

 6.2. Size:708K  infineon
ipw60r070c6 v2.1a .pdf

IPW60R075CPA IPW60R075CPA

MOSFET*

 6.3. Size:1384K  infineon
ipw60r070cfd7.pdf

IPW60R075CPA IPW60R075CPA

IPW60R070CFD7MOSFETPG-TO 247-3600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 6.4. Size:239K  inchange semiconductor
ipw60r070c6.pdf

IPW60R075CPA IPW60R075CPA

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070C6IIPW60R070C6FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 6.5. Size:248K  inchange semiconductor
ipw60r070p6.pdf

IPW60R075CPA IPW60R075CPA

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070P6IIPW60R070P6FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 6.6. Size:243K  inchange semiconductor
ipw60r070cfd7.pdf

IPW60R075CPA IPW60R075CPA

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R070CFD7IIPW60R070CFD7FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DMG8822UTS | NTNUS3171PZ

 

 
Back to Top

 


History: DMG8822UTS | NTNUS3171PZ

IPW60R075CPA
  IPW60R075CPA
  IPW60R075CPA
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top