IPW60R125CP MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPW60R125CP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPW60R125CP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm

Encapsulados: TO247

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IPW60R125CP datasheet

..1. Size:672K infineon
ipw60r125cp.pdf pdf_icon

IPW60R125CP C IMOS # A0 9 688DG9>CC6CI PG TO247 1 7!"% # 4= =;0.4,77C /0=4290/ 1 I8

..2. Size:242K inchange semiconductor
ipw60r125cp.pdf pdf_icon

isc N-Channel MOSFET Transistor IPW60R125CP IIPW60R125CP FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

4.1. Size:1329K infineon
ipw60r125cfd7.pdf pdf_icon

IPW60R125CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

4.2. Size:1257K infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

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