IPW60R199CP Todos los transistores

 ..1. Size:595K  infineon
 ipw60r199cp.pdf

IPW60R199CP CoolMOS Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.199 DS(on),max Ultra low gate charge Q 33 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant CoolMOS CP is specially design

 ..2. Size:242K  inchange semiconductor
 ipw60r199cp.pdf

isc N-Channel MOSFET Transistor IPW60R199CP IIPW60R199CP FEATURES Static drain-source on-resistance RDS(on) 199m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 0.1. Size:653K  infineon
 ipw60r199cpa.pdf

IPW60R199CP C IMOS # A0 9 688DG9>CC6CI 7!"% # 4= =;0.4,77C /0=4290/ 1 I8=>C

 6.1. Size:1494K  infineon
 ipw60r190c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according

 6.2. Size:851K  infineon
 ipw60r190e6 ipp60r190e6 ipa60r190e6.pdf

C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descripti n t b C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t e expeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti n l e m ke it in

 6.3. Size:1150K  infineon
 ipw60r190e6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)

 6.4. Size:2872K  infineon
 ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPP60R190P6, IPA60R190P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 6.5. Size:1214K  infineon
 ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to

 6.6. Size:3091K  infineon
 ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 6.7. Size:269K  inchange semiconductor
 ipw60r190c6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190C IIPW60R190C6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

 6.8. Size:243K  inchange semiconductor
 ipw60r190p6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190P6 IIPW60R190P6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 6.9. Size:242K  inchange semiconductor
 ipw60r190e6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R190E6 IIPW60R190E6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So