IPW65R080CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPW65R080CFD
   Código: 65F6080
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 391 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 43.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 170 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET IPW65R080CFD

IPW65R080CFD Datasheet (PDF)

..1. Size:1486K infineon
ipw65r080cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD650V CoolMOS CFD Power TransistorIPW65R080CFD Data SheetRev. 2.0, 2011-02-02Final Industrial & Multimarket650V CoolMOS CFD Power Transistor IPW65R080CFD1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pion

..2. Size:242K inchange semiconductor
ipw65r080cfd.pdf

isc N-Channel MOSFET Transistor IPW65R080CFDIIPW65R080CFDFEATURESStatic drain-source on-resistance:RDS(on)80mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

0.1. Size:1075K infineon
ipw65r080cfda.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPW65R080CFDA Data SheetRev. 2.1FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R080CFDATO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by

7.1. Size:1112K infineon
ipw65r037c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPW65R037C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R037C6TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

7.2. Size:1972K infineon
ipw65r019c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R019C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R019C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

7.3. Size:1705K infineon
ipw65r070c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPW65R070C6 Data SheetRev. 2.0, 2011-03-15Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPW65R070C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered

7.4. Size:1095K infineon
ipw65r041cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPW65R041CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R041CFDTO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle a

7.5. Size:1960K infineon
ipw65r045c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R045C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R045C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

7.6. Size:3785K infineon
ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

7.7. Size:1964K infineon
ipw65r065c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R065C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

7.8. Size:3828K infineon
ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf

7.9. Size:1925K infineon
ipw65r095c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R095C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

7.10. Size:870K infineon
ipw65r048cfda.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPW65R048CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R048CFDATO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by

7.11. Size:242K inchange semiconductor
ipw65r037c6.pdf

isc N-Channel MOSFET Transistor IPW65R037C6IIPW65R037C6FEATURESStatic drain-source on-resistance:RDS(on)37mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

7.12. Size:242K inchange semiconductor
ipw65r099c6.pdf

isc N-Channel MOSFET Transistor IPW65R099C6IIPW65R099C6FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

7.13. Size:241K inchange semiconductor
ipw65r070c6.pdf

isc N-Channel MOSFET Transistor IPW65R070C6IIPW65R070C6FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

7.14. Size:242K inchange semiconductor
ipw65r041cfd.pdf

isc N-Channel MOSFET Transistor IPW65R041CFDIIPW65R041CFDFEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

7.15. Size:242K inchange semiconductor
ipw65r045c7.pdf

isc N-Channel MOSFET Transistor IPW65R045C7IIPW65R045C7FEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

7.16. Size:242K inchange semiconductor
ipw65r065c7.pdf

isc N-Channel MOSFET Transistor IPW65R065C7IIPW65R065C7FEATURESStatic drain-source on-resistance:RDS(on)65mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

7.17. Size:242K inchange semiconductor
ipw65r095c7.pdf

isc N-Channel MOSFET Transistor IPW65R095C7IIPW65R095C7FEATURESStatic drain-source on-resistance:RDS(on)95mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

7.18. Size:331K inchange semiconductor
ipw65r048cfda.pdf

isc N-Channel MOSFET Transistor IPW65R048CFDAFEATURESDrain Current : I = 63.3A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.048(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switcha

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: