IPW90R1K2C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPW90R1K2C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO247

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IPW90R1K2C3 Datasheet (PDF)

..1. Size:644K infineon
ipw90r1k2c3.pdf

IPW90R1K2C3CIMOS #:A0INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL

..2. Size:243K inchange semiconductor
ipw90r1k2c3.pdf

isc N-Channel MOSFET Transistor IPW90R1K2C3IIPW90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on)1.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

6.1. Size:548K infineon
ipw90r1k0c3.pdf

IPW90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247 Ultra low gate chargeCoolMOS 90

7.1. Size:548K infineon
ipw90r120c3.pdf

IPW90R120C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T =25C 0.12DS(on),max J Extreme dv/dt ratedQ 270 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO247PG-TO247DS,on

8.1. Size:637K infineon
ipw90r340c3.pdf

IPW90R340C3CIMOS #:A0INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL

8.2. Size:563K infineon
ipw90r500c3.pdf

IPW90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247 Ultra low gate chargeCoolMOS 90

8.3. Size:548K infineon
ipw90r800c3.pdf

IPW90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247 Ultra low gate chargeCoolMOS 90

8.4. Size:243K inchange semiconductor
ipw90r340c3.pdf

isc N-Channel MOSFET Transistor IPW90R340C3IIPW90R340C3FEATURESStatic drain-source on-resistance:RDS(on)340mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

8.5. Size:243K inchange semiconductor
ipw90r500c3.pdf

isc N-Channel MOSFET Transistor IPW90R500C3IIPW90R500C3FEATURESStatic drain-source on-resistance:RDS(on)500mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

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