IPW90R500C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPW90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247 Ultra low gate chargeCoolMOS 90

isc N-Channel MOSFET Transistor IPW90R500C3IIPW90R500C3FEATURESStatic drain-source on-resistance:RDS(on)500mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

IPW90R1K2C3CIMOS #:A0INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL

IPW90R340C3CIMOS #:A0INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL

IPW90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247 Ultra low gate chargeCoolMOS 90

IPW90R120C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T =25C 0.12DS(on),max J Extreme dv/dt ratedQ 270 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO247PG-TO247DS,on

IPW90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247 Ultra low gate chargeCoolMOS 90

isc N-Channel MOSFET Transistor IPW90R1K2C3IIPW90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on)1.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

isc N-Channel MOSFET Transistor IPW90R340C3IIPW90R340C3FEATURESStatic drain-source on-resistance:RDS(on)340mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta