IPW90R800C3 Todos los transistores

 ..1. Size:548K  infineon
 ipw90r800c3.pdf

IPW90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.8 DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO247 Ultra low gate charge CoolMOS 90

 8.1. Size:644K  infineon
 ipw90r1k2c3.pdf

IPW90R1K2C3 C IMOS # A0IN U . J6A>;> 9 for industrial grade applications 688DG9>CC6CI U 2 AIG6 ADL

 8.2. Size:637K  infineon
 ipw90r340c3.pdf

IPW90R340C3 C IMOS # A0IN U . J6A>;> 9 for industrial grade applications 688DG9>CC6CI U 2 AIG6 ADL

 8.3. Size:548K  infineon
 ipw90r1k0c3.pdf

IPW90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 1.0 DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO247 Ultra low gate charge CoolMOS 90

 8.4. Size:563K  infineon
 ipw90r500c3.pdf

IPW90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO247 Ultra low gate charge CoolMOS 90

 8.5. Size:548K  infineon
 ipw90r120c3.pdf

 8.6. Size:243K  inchange semiconductor
 ipw90r1k2c3.pdf

isc N-Channel MOSFET Transistor IPW90R1K2C3 IIPW90R1K2C3 FEATURES Static drain-source on-resistance RDS(on) 1.2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

 8.7. Size:243K  inchange semiconductor
 ipw90r340c3.pdf

isc N-Channel MOSFET Transistor IPW90R340C3 IIPW90R340C3 FEATURES Static drain-source on-resistance RDS(on) 340m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 8.8. Size:243K  inchange semiconductor
 ipw90r500c3.pdf

isc N-Channel MOSFET Transistor IPW90R500C3 IIPW90R500C3 FEATURES Static drain-source on-resistance RDS(on) 500m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta