SPA06N80C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPA06N80C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 33 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: TO220FP
Búsqueda de reemplazo de SPA06N80C3 MOSFET
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SPA06N80C3 datasheet
spa06n80c3.pdf
SPA06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci
spa06n60c3.pdf
SPA06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge 1) 6.2 A I D Periodic avalanche rated High peak current capability Ultra low effective capacitances P-TO220-3-31 Extreme dv /dt rated Improved transconductance Fully isolated
spa06n60c3.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA06N60C3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS
Otros transistores... IPW90R500C3, IPW90R800C3, SPA02N80C3, SPA03N60C3, SPA04N50C3, SPA04N60C3, SPA04N80C3, SPA06N60C3, 2N7002, SPA07N60C3, SPA07N60CFD, SPA07N65C3, SPA08N50C3, SPA08N80C3, SPA11N60C3, SPA11N60CFD, SPA11N65C3
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