SPA15N60CFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPA15N60CFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm

Encapsulados: TO220FP

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SPA15N60CFD datasheet

 ..1. Size:342K  infineon
 spa15n60cfd.pdf pdf_icon

SPA15N60CFD

SPA15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220FP High peak current capability Qualified according to JEDEC1) for target applications CoolMOS CFD designed for

 ..2. Size:201K  inchange semiconductor
 spa15n60cfd.pdf pdf_icon

SPA15N60CFD

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA15N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 5.1. Size:700K  infineon
 spp15n60c3 spi15n60c3 spa15n60c3.pdf pdf_icon

SPA15N60CFD

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 5.2. Size:684K  infineon
 spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf pdf_icon

SPA15N60CFD

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

MOSTRAR MÁS

Otros transistores... SPA08N50C3, SPA08N80C3, SPA11N60C3, SPA11N60CFD, SPA11N65C3, SPA11N80C3, SPA12N50C3, SPA15N60C3, AON7410, SPA15N65C3, SPA16N50C3, SPA17N80C3, SPA20N60C3, SPA20N60CFD, SPA20N65C3, SPA21N50C3, SPB80N06S-08