SPA15N65C3 Todos los transistores

 ..1. Size:277K  infineon
 spa15n65c3.pdf

SPA15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-31 Type Package Marking SPA15N65C3 PG-TO220-3-31 15N65C3 Maximum ratings, at T =

 ..2. Size:200K  inchange semiconductor
 spa15n65c3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA15N65C3 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 7.1. Size:700K  infineon
 spp15n60c3 spi15n60c3 spa15n60c3.pdf

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 7.2. Size:342K  infineon
 spa15n60cfd.pdf

SPA15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220FP High peak current capability Qualified according to JEDEC1) for target applications CoolMOS CFD designed for

 7.3. Size:684K  infineon
 spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 7.4. Size:245K  inchange semiconductor
 spa15n60c3.pdf

isc N-Channel MOSFET Transistor SPA15N60C3 FEATURES Drain-source on-resistance RDS(on) 0.28 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V

 7.5. Size:201K  inchange semiconductor
 spa15n60cfd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA15N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING