SPA15N65C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPA15N65C3
Código: 15N65C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 VQgⓘ - Carga de la puerta: 63 nC
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 540 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de MOSFET SPA15N65C3
SPA15N65C3 Datasheet (PDF)
spa15n65c3.pdf
SPA15N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Low gate chargeR 0.28DS(on),max Extreme dv/dt ratedQ 63 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220-3-31Type Package MarkingSPA15N65C3 PG-TO220-3-31 15N65C3Maximum ratings, at T =
spa15n65c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA15N65C3FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
spp15n60c3 spi15n60c3 spa15n60c3.pdf
SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
spa15n60cfd.pdf
SPA15N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.330DS(on),max Extremely low reverse recovery chargeI 13.4 AD Ultra low gate charge Extreme dv /dt rated PG-TO220FP High peak current capability Qualified according to JEDEC1) for target applicationsCoolMOS CFD designed for:
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf
SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
spa15n60c3.pdf
isc N-Channel MOSFET Transistor SPA15N60C3FEATURES Drain-source on-resistance:RDS(on) 0.28@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V
spa15n60cfd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA15N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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