SPD15P10PLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPD15P10PLG

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 128 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 272 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de SPD15P10PLG MOSFET

- Selecciónⓘ de transistores por parámetros

 

SPD15P10PLG datasheet

 ..1. Size:692K  infineon
 spd15p10plg.pdf pdf_icon

SPD15P10PLG

SPD15P10PL G SIPMOS Power-Transistor Product Summary Features V -100 V DS P-Channel R 0.20 DS(on),max Enhancement mode I -15 A D logic level Avalanche rated PG-TO252-3 Pb-free lead plating; RoHS compliant Type Package Marking Lead free Packing SPD15P10PL G PG-TO252-3 15P10PL Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Pa

 5.1. Size:639K  1
 spd15p10pg spp15p10pg.pdf pdf_icon

SPD15P10PLG

SPP15P10P G SPD15P10P G SIPMOS Small-Signal-Transistor Product Summary Features V -100 V DS P-Channel R 0.24 DS(on),max Enhancement mode I -15 A D Normal level Avalanche rated PG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliant Type Package Marking Lead free Packing SPP15P10P G PG-TO220-3 15P10P Yes Non dry SPD15P10P G PG-TO252-3 15P10P Yes N

 9.1. Size:6260K  cn sps
 spd15n65t1t0tl.pdf pdf_icon

SPD15P10PLG

SPD15N65T1T0TL 650V /15A Tren ch Field Stop IGBT V 650 V CE Features I 15 A C Max Junction Temperature 150 C High breakdown voltage up to 650V for V I =15A 1.65 V CE(SAT) C improved reliability Short Circuit Rated Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli

 9.2. Size:1908K  cn sptech
 spd15n65t1.pdf pdf_icon

SPD15P10PLG

SPD15N65T1 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150 C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

MOSTRAR MÁS

Otros transistores... SPD06N80C3, SPD07N20G, SPD07N60C3, SPD07N60S5, SPD08N50C3, SPD08P06PG, SPD09P06PLG, SPD15P10PG, IRF730, SPD18P06PG, SPD30N03S2L-07G, SPD30N03S2L-10G, SPD30N03S2L-20G, SPD30P06PG, SPD50N03S2-07G, SPD50N03S2L-06G, SPD50P03LG