SPI07N65C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPI07N65C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de SPI07N65C3 MOSFET
SPI07N65C3 Datasheet (PDF)
spp07n65c3 spa07n65c3 spi07n65c3 rev1.92.pdf

SPP07N65C3, SPI07N65C3SPA07N65C3CoolMOS Power TransistorV 650 VDSFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 PG-TO
spp07n65c3 spa07n65c3 spi07n65c3.pdf

SPA07N65C3 330 = 3:)5 !5%26-6735V 650 VDSFeatureRDS(on) 0.6 + ;L G;KEBJI?ED7GN >?=> KEBI7=; I;9>DEBE=NID 7. A 2 BIG7 BEL =7I; 9>7G=;PGTO220 PGTO220PGTO262 1 -;G?E:?9 7K7B7D9>; G7I;:2 "MIG;C; :v/dt rated3 % ?=> F;7A 9JGG;DI 97F78?B?IN2 211P-TO220-3-31 &CFGEK;: IG7DH9ED:J9I7D9;PTO220
spp07n60c3 spi07n60c3 spa07n60c3.pdf

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P
Otros transistores... SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 , SPI07N60C3 , SPI07N60S5 , IRF1404 , SPI08N50C3 , SPI08N80C3 , SPI11N60C3 , SPI11N60CFD , SPI11N60S5 , SPI11N65C3 , SPI12N50C3 , SPI15N60C3 .
History: AP50T10GH-HF | HGA098N10A
History: AP50T10GH-HF | HGA098N10A



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