SPI20N65C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPI20N65C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 780 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO262

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SPI20N65C3 datasheet

 ..1. Size:611K  infineon
 spp20n65c3 spa20n65c3 spi20n65c3.pdf pdf_icon

SPI20N65C3

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor V 650 V DS Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconducta

 7.1. Size:554K  infineon
 spi20n60cfd.pdf pdf_icon

SPI20N65C3

SPI20N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.22 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO262 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Qualifi

 7.2. Size:683K  infineon
 spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf pdf_icon

SPI20N65C3

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transco

 7.3. Size:215K  inchange semiconductor
 spi20n60c3.pdf pdf_icon

SPI20N65C3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPI20N60C3 FEATURES With TO-262(I2PAK) package Low input capacitance and gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =2

MOSTRAR MÁS

Otros transistores... SPI11N65C3, SPI12N50C3, SPI15N60C3, SPI15N60CFD, SPI15N65C3, SPI16N50C3, SPI20N60C3, SPI20N60CFD, 7N65, SPI21N50C3, SPP02N60C3, SPP02N60S5, SPP02N80C3, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3