SPP02N60S5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP02N60S5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 77 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de SPP02N60S5 MOSFET
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SPP02N60S5 datasheet
spp02n60s5.pdf
SPP02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 02N60S5 SPP02N60S5 PG-TO220 Q67040-S418
spp02n60s5.pdf
isc N-Channel MOSFET Transistor SPP02N60S5 ISPP02N60S5 FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSOLUTE M
spp02n60c3.pdf
isc N-Channel MOSFET Transistor SPP02N60C3 ISPP02N60C3 FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Otros transistores... SPI15N60CFD, SPI15N65C3, SPI16N50C3, SPI20N60C3, SPI20N60CFD, SPI20N65C3, SPI21N50C3, SPP02N60C3, IRF9540, SPP02N80C3, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3, SPP04N60S5, SPP04N80C3, SPP06N60C3
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